Insulated Gate Bipolar Transistor IGBT Theory and Design

Vinod Khanna Kumar

A comprehensive and «state-of-the-art» coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Категория: техническая литература

ISBN: 9780471660996

Правообладатель: John Wiley & Sons Limited

Легальная стоимость: 24296.32 руб.

Ограничение по возрасту: 0+